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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3 package *High breakdown voltage *Fast switching speed. *Wide area of safe operation APPLICATIONS *For switching regulator applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2SC2914 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 10 120 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=5mA ; RBE=7 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=10A; IB=2A IC=10A; IB=2A VCB=400V ;IE=0 VEB=5V; IC=0 IC=5A ; VCE=5V 12 MIN 400 500 7 2SC2914 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE TYP. MAX UNIT V V V 1.0 2.0 100 100 V V A A 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2914 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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